page:p2 - p 1 plastic - encapsulate transistors guangdong hottech industrial co,. ltd. fe a tures ? high dc current gain. ? low collector - to - emitter saturation voltage. ? large current capacity. ? very small size making it easy to provide high - density,small - sized hybrid ic s marking: cf maximum ratings ( t a =25 unless otherwise noted) par a met e r symbol v a lue uni t collector - base v ol t age v cbo 30 v collector - emitter v ol t ag e v ceo 25 v emitter - base v ol t age v ebo 15 v collector cur r ent - continuous i c 1.2 a collector power dissi p ation p c 0.5 w junction t empe r ature t j 150 s torage t emp e r a ture t stg - 55to +150 electrical characteristics ( @ ta=25 unless otherwise specif ied ) parameter s y mbol test conditions m in t yp m ax u nit collector - b as e breakdo w n voltage v cbo i c =10ua,i e =0 30 v collector - e m itter breakd o wn volta g e v ceo i c =1ma,i b =0 25 v emitter - base breakdo w n voltage v ebo i e =10ua,i c =0 15 v collector cut - off current i cbo v c b =20 v ,i e =0 0.1 a emitter cut - off current i ebo v eb =10 v ,i c =0 0.1 a dc c urrent g ain h fe v c e =5 v ,i c =500ma 800 1500 3200 collector - e m itter saturation voltage v ce(s a t ) i c =0.5a, i b = 0 .01a 0.12 0.5 v base - emitter saturation voltage v be(sat) i c =0.5a, i b = 0 .01a 0.85 1.2 v transition frequency f t v c e =10v,i c =50ma 220 mhz collector output capacitance c ob v c b =10v,i e =0,f=1mhz 17 pf 2sc 3650 ( np n ) 1. base 2. collecto sot - 89 3. emitter
page:p2 - p 2 plastic - encapsulate transistors guangdong hottech industrial co,. ltd. 2sc 3650 typical characteristics
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